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CPC
COOPERATIVE PATENT CLASSIFICATION
H10N
ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR [2024-01]
NOTE

  • In this subclass, the periodic system used is the I to VIII group system indicated in the Periodic Table under Note (3) of section C.
Thermoelectric or thermomagnetic devices [2023-02]
H10N 10/00
Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects (integrated devices or assemblies of multiple devices H10N 19/00) [2023-02]
H10N 10/01
.
Manufacture or treatment [2023-02]
H10N 10/10
.
operating with only the Peltier or Seebeck effects [2023-02]
H10N 10/13
. .
characterised by the heat-exchanging means at the junction [2023-02]
H10N 10/17
. .
characterised by the structure or configuration of the cell or thermocouple forming the device [2023-02]
H10N 10/80
.
Constructional details [2023-02]
H10N 10/81
. .
Structural details of the junction [2023-02]
H10N 10/813
. . .
the junction being separable, e.g. using a spring [2023-02]
H10N 10/817
. . .
the junction being non-separable, e.g. being cemented, sintered or soldered [2023-02]
H10N 10/82
. .
Connection of interconnections [2023-02]
H10N 10/85
. .
Thermoelectric active materials [2023-02]
H10N 10/851
. . .
comprising inorganic compositions [2023-02]
H10N 10/852
. . . .
comprising tellurium, selenium or sulfur [2023-02]
H10N 10/853
. . . .
comprising arsenic, antimony or bismuth (H10N 10/852 takes precedence) [2023-02]
H10N 10/854
. . . .
comprising only metals (H10N 10/852, H10N 10/853 take precedence) [2023-02]
H10N 10/855
. . . .
comprising compounds containing boron, carbon, oxygen or nitrogen [2023-02]
WARNING

H10N 10/8552
. . . . .
{the compounds being superconducting} [2023-02]
H10N 10/8556
. . . .
{comprising compounds containing germanium or silicon} [2023-02]
WARNING

H10N 10/856
. . .
comprising organic compositions [2023-02]
H10N 10/857
. . .
comprising compositions changing continuously or discontinuously inside the material [2023-02]
H10N 15/00
Thermoelectric devices without a junction of dissimilar materials; Thermomagnetic devices, e.g. using the Nernst-Ettingshausen effect (integrated devices or assemblies of multiple devices H10N 19/00) [2023-02]
H10N 15/10
.
Thermoelectric devices using thermal change of the dielectric constant, e.g. working above and below the Curie point [2023-02]
H10N 15/15
. .
{Thermoelectric active materials} [2024-05]
H10N 15/20
.
Thermomagnetic devices using thermal change of the magnetic permeability, e.g. working above and below the Curie point [2023-02]
H10N 19/00
Integrated devices, or assemblies of multiple devices, comprising at least one thermoelectric or thermomagnetic element covered by groups H10N 10/00 - H10N 15/00 [2023-08]
WARNING

H10N 19/101
.
{Multiple thermocouples connected in a cascade arrangement} [2023-02]
Piezoelectric, electrostrictive or magnetostrictive devices [2023-02]
H10N 30/00
Piezoelectric or electrostrictive devices (integrated devices or assemblies of multiple devices H10N 39/00) [2023-02]
WARNING

H10N 30/01
.
Manufacture or treatment [2023-02]
H10N 30/02
. .
Forming enclosures or casings [2023-02]
H10N 30/03
. .
Assembling devices that include piezoelectric or electrostrictive parts [2023-02]
H10N 30/04
. .
Treatments to modify a piezoelectric or electrostrictive property, e.g. polarisation characteristics, vibration characteristics or mode tuning [2023-02]
H10N 30/045
. . .
by polarising [2023-02]
H10N 30/05
. .
Manufacture of multilayered piezoelectric or electrostrictive devices, or parts thereof, e.g. by stacking piezoelectric bodies and electrodes [2023-02]
H10N 30/053
. . .
by integrally sintering piezoelectric or electrostrictive bodies and electrodes [2023-02]
H10N 30/057
. . .
by stacking bulk piezoelectric or electrostrictive bodies and electrodes [2023-02]
H10N 30/06
. .
Forming electrodes or interconnections, e.g. leads or terminals [2023-02]
H10N 30/063
. . .
Forming interconnections, e.g. connection electrodes of multilayered piezoelectric or electrostrictive parts [2023-02]
H10N 30/067
. . .
Forming single-layered electrodes of multilayered piezoelectric or electrostrictive parts [2023-02]
H10N 30/07
. .
Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base [2023-02]
H10N 30/071
. . .
Mounting of piezoelectric or electrostrictive parts together with semiconductor elements, or other circuit elements, on a common substrate [2023-02]
H10N 30/072
. . .
by laminating or bonding of piezoelectric or electrostrictive bodies [2023-02]
H10N 30/073
. . . .
by fusion of metals or by adhesives [2023-02]
H10N 30/074
. . .
by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing [2023-02]
H10N 30/076
. . . .
by vapour phase deposition [2023-02]
H10N 30/077
. . . .
by liquid phase deposition [2023-02]
H10N 30/078
. . . . .
by sol-gel deposition [2023-02]
H10N 30/079
. . . .
using intermediate layers, e.g. for growth control [2023-02]
H10N 30/08
. .
Shaping or machining of piezoelectric or electrostrictive bodies [2023-02]
H10N 30/081
. . .
by coating or depositing using masks, e.g. lift-off [2023-02]
H10N 30/082
. . .
by etching, e.g. lithography [2023-02]
H10N 30/084
. . .
by moulding or extrusion [2023-02]
H10N 30/085
. . .
by machining [2023-02]
H10N 30/086
. . . .
by polishing or grinding [2023-02]
H10N 30/088
. . . .
by cutting or dicing [2023-02]
H10N 30/089
. . . .
by punching [2023-02]
H10N 30/09
. .
Forming piezoelectric or electrostrictive materials [2023-02]
H10N 30/092
. . .
Forming composite materials [2023-02]
H10N 30/093
. . .
Forming inorganic materials [2023-02]
H10N 30/095
. . . .
by melting [2023-02]
H10N 30/097
. . . .
by sintering [2023-02]
H10N 30/098
. . .
Forming organic materials [2023-02]
H10N 30/101
.
{with electrical and mechanical input and output, e.g. having combined actuator and sensor parts} [2024-05]
H10N 30/20
.
with electrical input and mechanical output, e.g. functioning as actuators or vibrators [2023-02]
H10N 30/202
. .
{using longitudinal or thickness displacement combined with bending, shear or torsion displacement} [2023-02]
H10N 30/2023
. . .
{having polygonal or rectangular shape} [2023-02]
H10N 30/2027
. . .
{having cylindrical or annular shape} [2023-02]
H10N 30/204
. .
{using bending displacement, e.g. unimorph, bimorph or multimorph cantilever or membrane benders} [2023-02]
H10N 30/2041
. . .
{Beam type} [2023-02]
H10N 30/2042
. . . .
{Cantilevers, i.e. having one fixed end} [2023-02]
H10N 30/2043
. . . . .
{connected at their free ends, e.g. parallelogram type} [2023-02]
H10N 30/2044
. . . . .
{having multiple segments mechanically connected in series, e.g. zig-zag type} [2023-02]
H10N 30/2045
. . . . .
{adapted for in-plane bending displacement} [2023-02]
H10N 30/2046
. . . . .
{adapted for multi-directional bending displacement} [2023-02]
H10N 30/2047
. . .
{Membrane type} [2023-02]
H10N 30/2048
. . . .
{having non-planar shape} [2023-02]
H10N 30/206
. .
{using only longitudinal or thickness displacement, e.g. d33 or d31 type devices} [2023-02]
H10N 30/208
. .
{using shear or torsion displacement, e.g. d15 type devices} [2023-02]
H10N 30/30
.
with mechanical input and electrical output, e.g. functioning as generators or sensors [2023-02]
H10N 30/302
. .
{Sensors} [2023-02]
H10N 30/304
. .
{Beam type} [2023-02]
H10N 30/306
. . .
{Cantilevers} [2023-02]
H10N 30/308
. .
{Membrane type} [2023-02]
H10N 30/40
.
with electrical input and electrical output, e.g. functioning as transformers [2023-02]
H10N 30/50
.
having a stacked or multilayer structure [2023-02]
H10N 30/501
. .
{having a non-rectangular cross-section in a plane parallel to the stacking direction, e.g. polygonal or trapezoidal in side view} [2024-05]
H10N 30/503
. .
{having a non-rectangular cross-section in a plane orthogonal to the stacking direction, e.g. polygonal or circular in top view} [2024-05]
H10N 30/505
. . .
{the cross-section being annular} [2024-05]
H10N 30/506
. .
{having a cylindrical shape and having stacking in the radial direction, e.g. coaxial or spiral type rolls} [2024-05]
H10N 30/508
. .
{adapted for alleviating internal stress, e.g. cracking control layers} [2023-02]
H10N 30/60
.
having a coaxial cable structure [2023-02]
H10N 30/702
.
{based on piezoelectric or electrostrictive fibres} [2024-05]
H10N 30/704
.
{based on piezoelectric or electrostrictive films or coatings} [2024-05]
H10N 30/706
. .
{characterised by the underlying bases, e.g. substrates} [2024-05]
H10N 30/708
. . .
{Intermediate layers, e.g. barrier, adhesion or growth control buffer layers} [2024-05]
H10N 30/80
.
Constructional details [2023-02]
WARNING

H10N 30/802
. .
{Circuitry or processes for operating piezoelectric or electrostrictive devices not otherwise provided for, e.g. drive circuits} [2024-05]
H10N 30/804
. . .
{for piezoelectric transformers} [2024-05]
H10N 30/85
. .
Piezoelectric or electrostrictive active materials [2023-02]
WARNING

H10N 30/852
. . .
{Composite materials, e.g. having 1-3 or 2-2 type connectivity} [2023-02]
H10N 30/853
. . .
Ceramic compositions [2023-02]
H10N 30/8536
. . . .
{Alkaline earth metal based oxides, e.g. barium titanates} [2023-02]
H10N 30/8542
. . . .
{Alkali metal based oxides, e.g. lithium, sodium or potassium niobates} [2023-02]
H10N 30/8548
. . . .
{Lead-based oxides} [2024-05]
H10N 30/8554
. . . . .
{Lead-zirconium titanate [PZT] based} [2024-05]
H10N 30/8561
. . . .
{Bismuth-based oxides} [2024-05]
H10N 30/857
. . .
Macromolecular compositions [2023-02]
H10N 30/87
. .
Electrodes or interconnections, e.g. leads or terminals [2023-02]
H10N 30/871
. . .
{Single-layered electrodes of multilayer piezoelectric or electrostrictive devices, e.g. internal electrodes} [2023-02]
H10N 30/872
. . .
{Interconnections, e.g. connection electrodes of multilayer piezoelectric or electrostrictive devices} [2024-05]
H10N 30/874
. . . .
{embedded within piezoelectric or electrostrictive material, e.g. via connections} [2023-02]
H10N 30/875
. . .
{Further connection or lead arrangements, e.g. flexible wiring boards, terminal pins} [2023-02]
H10N 30/877
. . .
{Conductive materials} [2024-05]
H10N 30/878
. . . .
{the principal material being non-metallic, e.g. oxide or carbon based} [2023-02]
H10N 30/88
. .
Mounts; Supports; Enclosures; Casings [2023-02]
H10N 30/883
. . .
{Additional insulation means preventing electrical, physical or chemical damage, e.g. protective coatings} [2024-05]
H10N 30/886
. . .
{Additional mechanical prestressing means, e.g. springs} [2024-05]
H10N 35/00
Magnetostrictive devices (integrated devices or assemblies of multiple devices H10N 39/00) [2023-02]
WARNING

H10N 35/01
.
Manufacture or treatment [2023-02]
H10N 35/101
.
{with mechanical input and electrical output, e.g. generators, sensors} [2023-02]
H10N 35/80
.
Constructional details [2023-02]
WARNING

H10N 35/85
. .
Magnetostrictive active materials [2023-02]
WARNING

H10N 39/00
Integrated devices, or assemblies of multiple devices, comprising at least one piezoelectric, electrostrictive or magnetostrictive element covered by groups H10N 30/00H10N 35/00 [2023-08]
WARNING

Galvanomagnetic or similar magnetic-effect devices [2023-02]
H10N 50/00
Galvanomagnetic devices (Hall-effect devices H10N 52/00; integrated devices or assemblies of multiple devices H10N 59/00) [2023-02]
WARNING

H10N 50/01
.
Manufacture or treatment [2023-02]
H10N 50/10
.
Magnetoresistive devices [2023-02]
H10N 50/20
.
Spin-polarised current-controlled devices (magnetoresistive devices H10N 50/10) [2023-02]
WARNING

H10N 50/80
.
Constructional details [2023-02]
H10N 50/85
. .
Magnetic active materials [2023-02]
WARNING

H10N 52/00
Hall-effect devices (integrated devices or assemblies of multiple devices H10N 59/00) [2023-02]
H10N 52/01
.
Manufacture or treatment [2023-02]
H10N 52/101
.
{Semiconductor Hall-effect devices} [2023-02]
H10N 52/80
.
Constructional details [2023-02]
H10N 52/85
. .
Magnetic active materials [2023-02]
WARNING

H10N 59/00
Integrated devices, or assemblies of multiple devices, comprising at least one galvanomagnetic or Hall-effect element covered by groups H10N 50/00 - H10N 52/00 (MRAM devices H10B 61/00) [2023-08]
WARNING

Superconducting devices [2023-02]
H10N 60/00
Superconducting devices (integrated devices or assemblies of multiple devices H10N 69/00) [2023-02]
H10N 60/01
.
Manufacture or treatment [2023-02]
H10N 60/0128
. .
{of composite superconductor filaments (comprising copper oxide H10N 60/0268)} [2023-02]
H10N 60/0156
. .
{of devices comprising Nb or an alloy of Nb with one or more of the elements of group IVB, e.g. titanium, zirconium or hafnium} [2024-05]
H10N 60/0184
. .
{of devices comprising intermetallic compounds of type A-15, e.g. Nb3Sn} [2023-02]
H10N 60/0212
. .
{of devices comprising molybdenum chalcogenides} [2023-02]
H10N 60/0241
. .
{of devices comprising nitrides or carbonitrides} [2023-02]
H10N 60/0268
. .
{of devices comprising copper oxide} [2023-02]
H10N 60/0296
. . .
{Processes for depositing or forming copper oxide superconductor layers} [2024-05]
H10N 60/0324
. . . .
{from a solution} [2023-02]
H10N 60/0352
. . . .
{from a suspension or slurry, e.g. screen printing or doctor blade casting} [2024-05]
H10N 60/0381
. . . .
{by evaporation, e.g. MBE} [2024-05]
H10N 60/0408
. . . .
{by sputtering} [2023-02]
H10N 60/0436
. . . .
{by chemical vapour deposition [CVD]} [2023-02]
H10N 60/0464
. . . . .
{by metalloorganic chemical vapour deposition [MOCVD]} [2023-02]
H10N 60/0492
. . . .
{by thermal spraying, e.g. plasma deposition} [2023-02]
H10N 60/0521
. . . .
{by pulsed laser deposition, e.g. laser sputtering} [2024-05]
H10N 60/0548
. . . .
{by deposition and subsequent treatment, e.g. oxidation of pre-deposited material} [2024-05]
H10N 60/0576
. . . .
{characterised by the substrate} [2023-02]
H10N 60/0604
. . . . .
{Monocrystalline substrates, e.g. epitaxial growth} [2023-02]
H10N 60/0632
. . . . .
{Intermediate layers, e.g. for growth control} [2023-02]
H10N 60/0661
. . .
{Processes performed after copper oxide formation, e.g. patterning} [2024-05]
H10N 60/0688
. . . .
{Etching} [2023-02]
H10N 60/0716
. . . .
{Passivating} [2024-05]
H10N 60/0744
. . .
{Manufacture or deposition of electrodes} [2024-05]
H10N 60/0772
. . .
{Processes including the use of non-gaseous precursors} [2024-05]
H10N 60/0801
. . .
{Manufacture or treatment of filaments or composite wires} [2024-05]
H10N 60/0828
. . .
{Introducing flux pinning centres} [2023-02]
H10N 60/0856
. .
{of devices comprising metal borides, e.g. MgB2} [2023-02]
H10N 60/0884
. .
{Treatment of superconductor layers by irradiation, e.g. ion-beam, electron-beam, laser beam or X-rays} [2024-05]
H10N 60/0912
. .
{of Josephson-effect devices} [2023-02]
H10N 60/0941
. . .
{comprising high-Tc ceramic materials} [2023-02]
H10N 60/10
.
Junction-based devices [2023-02]
H10N 60/11
. .
{Single-electron tunnelling devices} [2024-05]
H10N 60/12
. .
Josephson-effect devices [2023-02]
H10N 60/124
. . .
{comprising high-Tc ceramic materials} [2023-02]
H10N 60/126
. . .
{comprising metal borides, e.g. MgB2} [2023-02]
H10N 60/128
. .
{having three or more electrodes, e.g. transistor-like structures} [2023-02]
H10N 60/20
.
Permanent superconducting devices [2023-02]
H10N 60/202
. .
{comprising metal borides, e.g. MgB2} [2023-02]
H10N 60/203
. .
{comprising high-Tc ceramic materials} [2023-02]
H10N 60/205
. .
{having three or more electrodes, e.g. transistor-like structures  (H10N 60/128 takes precedence)} [2023-02]
H10N 60/207
. . .
{Field effect devices} [2023-02]
H10N 60/208
. .
{based on Abrikosov vortices} [2023-02]
H10N 60/30
.
Devices switchable between superconducting and normal states [2023-02]
H10N 60/35
. .
Cryotrons [2023-02]
H10N 60/355
. . .
Power cryotrons [2023-02]
H10N 60/80
.
Constructional details [2023-02]
H10N 60/805
. .
{for Josephson-effect devices} [2023-02]
H10N 60/81
. .
Containers; Mountings [2023-02]
H10N 60/815
. . .
{for Josephson-effect devices} [2023-02]
H10N 60/82
. .
Current path [2023-02]
H10N 60/83
. .
Element shape [2023-02]
H10N 60/84
. .
Switching means for devices switchable between superconducting and normal states [2023-02]
H10N 60/85
. .
Superconducting active materials [2023-02]
H10N 60/851
. . .
{Organic superconductors} [2024-05]
H10N 60/853
. . . .
{Fullerene superconductors, e.g. soccer ball-shaped allotropes of carbon, e.g. C60 or C94} [2024-05]
H10N 60/855
. . .
{Ceramic superconductors} [2024-05]
H10N 60/857
. . . .
{comprising copper oxide} [2023-02]
H10N 60/858
. . . . .
{having multilayered structures, e.g. superlattices} [2024-05]
H10N 60/99
.
{Alleged superconductivity} [2023-02]
H10N 69/00
Integrated devices, or assemblies of multiple devices, comprising at least one superconducting element covered by group H10N 60/00 [2023-08]
WARNING

Other electric solid-state devices [2023-02]
H10N 70/00
Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching (integrated devices or assemblies of multiple devices H10N 79/00) [2024-01]
H10N 70/011
.
{Manufacture or treatment of multistable switching devices} [2023-02]
H10N 70/021
. .
{Formation of switching materials, e.g. deposition of layers} [2024-05]
H10N 70/023
. . .
{by chemical vapor deposition, e.g. MOCVD, ALD} [2023-02]
H10N 70/026
. . .
{by physical vapor deposition, e.g. sputtering} [2023-02]
H10N 70/028
. . .
{by conversion of electrode material, e.g. oxidation} [2023-02]
H10N 70/041
. .
{Modification of switching materials after formation, e.g. doping (shaping H10N 70/061)} [2024-05]
H10N 70/043
. . .
{by implantation} [2023-02]
H10N 70/046
. . .
{by diffusion, e.g. photo-dissolution} [2023-02]
H10N 70/061
. .
{Shaping switching materials} [2024-05]
H10N 70/063
. . .
{by etching of pre-deposited switching material layers, e.g. lithography} [2023-02]
H10N 70/066
. . .
{by filling of openings, e.g. damascene method} [2023-02]
H10N 70/068
. . .
{by processes specially adapted for achieving sub-lithographic dimensions, e.g. using spacers} [2023-02]
H10N 70/10
.
Solid-state travelling-wave devices [2023-02]
H10N 70/151
.
{Charge density wave transport devices} [2023-02]
H10N 70/20
.
Multistable switching devices, e.g. memristors [2023-02]
H10N 70/231
. .
{based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect} [2023-02]
H10N 70/235
. . .
{between different crystalline phases, e.g. cubic and hexagonal} [2023-02]
H10N 70/24
. .
{based on migration or redistribution of ionic species, e.g. anions, vacancies} [2023-02]
H10N 70/245
. . .
{the species being metal cations, e.g. programmable metallization cells} [2023-02]
H10N 70/25
. .
{based on bulk electronic defects, e.g. trapping of electrons} [2023-02]
H10N 70/253
. .
{having three or more electrodes, e.g. transistor-like devices} [2024-05]
H10N 70/257
. .
{having switching assisted by radiation or particle beam, e.g. optically controlled devices} [2024-05]
H10N 70/801
.
{Constructional details of multistable switching devices} [2023-02]
H10N 70/821
. .
{Device geometry} [2023-02]
H10N 70/823
. . .
{adapted for essentially horizontal current flow, e.g. bridge type devices} [2023-02]
H10N 70/826
. . .
{adapted for essentially vertical current flow, e.g. sandwich or pillar type devices} [2023-02]
H10N 70/8265
. . . .
{on sidewalls of dielectric structures, e.g. mesa-shaped or cup-shaped devices} [2024-05]
H10N 70/828
. . .
{Current flow limiting means within the switching material region, e.g. constrictions} [2023-02]
H10N 70/841
. .
{Electrodes} [2023-02]
H10N 70/8413
. . .
{adapted for resistive heating} [2023-02]
H10N 70/8416
. . .
{adapted for supplying ionic species} [2023-02]
H10N 70/8418
. . .
{adapted for focusing electric field or current, e.g. tip-shaped} [2023-02]
H10N 70/861
. .
{Thermal details} [2023-02]
H10N 70/8613
. . .
{Heating or cooling means other than resistive heating electrodes, e.g. heater in parallel} [2023-02]
H10N 70/8616
. . .
{Thermal insulation means} [2023-02]
H10N 70/881
. .
{Switching materials} [2023-02]
H10N 70/882
. . .
{Compounds of sulfur, selenium or tellurium, e.g. chalcogenides} [2023-02]
H10N 70/8822
. . . .
{Sulfides, e.g. CuS} [2023-02]
H10N 70/8825
. . . .
{Selenides, e.g. GeSe} [2023-02]
H10N 70/8828
. . . .
{Tellurides, e.g. GeSbTe} [2023-02]
H10N 70/883
. . .
{Oxides or nitrides} [2023-02]
H10N 70/8833
. . . .
{Binary metal oxides, e.g. TaOx} [2023-02]
H10N 70/8836
. . . .
{Complex metal oxides, e.g. perovskites, spinels} [2023-02]
H10N 70/884
. . .
{based on at least one element of group IIIA, IVA or VA, e.g. elemental or compound semiconductors (compounds of sulfur, selenium or tellurium, e.g. chalcogenides H10N 70/882; oxides or nitrides H10N 70/883)} [2024-05]
H10N 70/8845
. . . .
{Carbon or carbides} [2023-02]
H10N 79/00
Integrated devices, or assemblies of multiple devices, comprising at least one solid-state element covered by group H10N 70/00 (ReRAM devices H10B 63/00; PCRAM devices H10B 63/10) [2023-08]
WARNING


H10N 80/00
Bulk negative-resistance effect devices (integrated devices or assemblies of multiple devices H10N 89/00) [2023-02]
H10N 80/01
.
{Manufacture or treatment} [2023-02]
H10N 80/10
.
Gunn-effect devices [2023-02]
H10N 80/103
. .
{controlled by electromagnetic radiation} [2023-02]
H10N 80/107
. .
{Gunn diodes} [2023-02]
H10N 89/00
Integrated devices, or assemblies of multiple devices, comprising at least one bulk negative resistance effect element covered by group H10N 80/00 [2023-08]
WARNING

H10N 89/02
.
{Gunn-effect integrated devices} [2024-05]
H10N 97/00
Electric solid-state thin-film or thick-film devices, not otherwise provided for [2023-02]
H10N 99/00
Subject matter not provided for in other groups of this subclass [2023-02]
H10N 99/03
.
{Devices using Mott metal-insulator transition, e.g. field-effect transistor-like devices} [2024-05]
H10N 99/05
.
{Devices based on quantum mechanical effects, e.g. quantum interference devices or metal single-electron transistors} [2024-05]